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| AMMC - 6420 6 - 18 GHz Power Amplifier Data Sheet Chip Size: 2000 x 2000 m (78.5 x 78.5 mils) Chip Size Tolerance: 10 m (0.4 mils) Chip Thickness: 100 10 m (4 0.4 mils) Pad Dimensions: 100 x 100 m (4 0.4 mils) Description AMMC-6420 MMIC is a broadband 1W power amplifier designedforuseinfrequencybandsbetween6to18GHz. Itisacost-effectivealternativeincommercialcommunications systems to a discrete FET hybrid. The MMIC has a partialinputandoutputmatchto50butcanbeeasily externally matched by single element for narrow band frequencycoverageTheMMICisunconditionallystable overallfrequenciesandbiasconditions.Gatevoltageis set using theVg pin to optimize for linear or saturated power amplification. A temperature compensated RF outputpowerdetectorcircuitallowsdifferentialoutput powerdetectionof0.3V/Wat18GHz.Forimprovedreliabilityandmoistureprotection,thedieispassivatedat theactiveareas. Features * Widefrequencyrange:6-18GHz * Highgain:20dB * Power:@17GHz,P-2dB=30.5dBm * Highlylinear:OIP3=38dBm * IntegratedRFpowerdetector * 5.5Volt,-0.6Volt,800mAoperation Applications * MicrowaveRadiosystems * SatelliteVSATandDBSsystems * LMDS&Pt-PtmmWLongHaul * 802.16&802.20WiMaxBWA * WLLandMMDSloops * Commercialgrademilitary * Can be driven by AMMC-5618 (6-20 GHz) MMIC increasingludingoverallgain. AMMC-6420 Absolute Maximum Ratings[1] Symbol Vd Vg Id Pin Tch Tstg Tmax Parameters/Conditions PositiveDrainVoltage GateSupplyVoltage DrainCurrent CWInputPower OperatingChannelTemp. StorageCaseTemp. MaximumAssemblyTemp (60secmax) V V mA Units Min. -3 Max. 7 0.5 1500 23 +150 dBm C C C -65 +150 +300 Note: 1. Operationinexcessofanyoneoftheseconditionsmayresultinpermanentdamagetothisdevice. Note:These devices are ESD sensitive.The following precautions are strongly recommended. Ensure that an ESD approvedcarrierisusedwhendicearetransportedfromonedestinationtoanother.Personalgroundingistobeworn atalltimeswhenhandlingthesedevices. AMMC-6420 DC Specifications/Physical Properties [1] Symbol Id Parameters and Test Conditions DrainSupplyCurrent (underanyRFpowerdriveandtemperature) (Vd=5.5V,VgsetforIdTypical) GateSupplyOperatingVoltage (Id(Q)=800(mA)) ThermalResistance[2] (Backsidetemperature,Tb=25C) Units mA Min. Typ. 800 Max. 1000 Vg qch-b V C/W -0.8 -0.6 8.9 -0.4 Notes: 1. AmbientoperationaltemperatureTA=25Cunlessotherwisenoted. 2. Channel-to-backsideThermalResistance(ch-b)=10.7C/WatTchannel(Tc)=120Casmeasuredusinginfraredmicroscopy.ThermalResistanceatbacksidetemperature(Tb)=25Ccalculatedfrommeasureddata. AMMC-6420 RF Specifications [3, 4, 5] (TA= 25C, Vd=5.5, Id(Q)=800 mA, Zo=50 ) Symbol Gain P-1dB P-3dB OIP3 Parameters and Test Conditions Small-signalGain[4] OutputPowerat1dB GainCompression OutputPowerat3dB GainCompression ThirdOrderIntercept Point;Df=100MHz; Pin=-20dBm InputReturnLoss[4] OutputReturnLoss[4] Min.ReverseIsolation Units dB dBm dBm dBm Minimum 16.5 27 Typical 20 29 30 38 Maximum Sigma 0.45 0.27 0.23 0.75 RLin RLout Isolation dB dB dB -3 -6 -45 0.23 0.25 1.10 Notes: 3. Small/Large-signaldatameasuredinwaferformTA=25C. 4. 100%on-waferRFtestisdoneatfrequency=8,12,and18GHz. 5. Specificationsarederivedfrommeasurementsina50testenvironment.Aspectsoftheamplifierperformancemaybeimprovedovera morenarrowbandwidthbyapplicationofadditionalconjugate,linearity,orpowermatching. LSL LSL LSL 17 18 19 20 27 28 29 0 1 28 29 Gain at 12 GHz P-1dB at 8 GHz P-1dB at 18 GHz TypicaldistributionofSmallSignalGainandOutputPower@P-1dB.Basedon1500partsampledoverseveralproductionlots 2 AMMC-6420 Typical Performances (TA = 25C, Vd =5.5 V, ID = 800 mA, Zin = Zout = 50 ) NOTE:Thesemeasurementsareina50testenvironment.Aspectsoftheamplifierperformancemaybeimproved overamorenarrowbandwidthbyapplicationofadditionalconjugate,linearity,orpowermatching. 40 5 0 25 S21[dB] 20 15 10 5 0 S21[dB] S12[dB] 0 0 40 P-2 PAE 5 -20 -5 -40 -10 P-2 [dBm], PAE [%] S11[dB] S22[dB] Return Loss [dB] 0 25 20 15 -60 S12 [dB] -15 2 4 6 8 10 12 14 16 Frequency [GHz] 18 20 -80 22 -20 2 4 6 8 10 12 14 16 Frequency [GHz] 18 20 22 10 4 6 8 10 12 14 Frequency [GHz] 16 18 20 Figure 1. Typical Gain and Reverse Isolation Figure 2. Typical Return Loss (Input and Output) Figure 3. Typical Output Power (@P-2) and PAE 10 9 8 7 Noise Figure [dB] 50 40 5 Po[dBm], and, PAE[%] Pout(dBm) PAE[%] Id(total) 950 45 0 25 20 15 10 5 850 IP [dBm] 5 4 2 1 0 40 750 5 650 0 4 6 8 10 12 14 Frequency [GHz] 16 18 20 4 6 8 10 12 14 Frequency [GHz] 16 18 20 0 -10 -5 0 5 10 Pin [dBm] 15 550 20 Figure 4. Typical Noise Figure Figure 5. Typical Output 3rd Order Intercept Pt. Figure 6. Typical Output Power, PAE, and Total Drain Current versus Input Power at 18GHz 0 0 0 S21_20 S21_-40 S21_85 -5 -5 25 S11[dB] S22[dB] -15 -15 S21[dB] -10 -10 20 15 -20 S11_20 S11_-40 S11_85 -20 S22_20 S22_-40 S22_85 10 -25 -25 0 5 10 15 Frequency [GHz] 20 25 0 5 10 15 Frequency[GHz] 20 25 5 0 5 10 15 Frequency[GHz] 20 25 Figure 7. Typical S11 over temperature Figure 8. Typical S22 over temperature Figure 9. Typical Gain over temperature Ids [mA] 6 4 2 0 P-2 [dBm] 28 26 24 P-2_85deg 22 20 P-2_20deg P-2_-40deg 5 10 15 Frequency [GHz] 20 Figure 10. Typical P-2 over temperature Typical Scattering Parameters [1], (TA = 25C, Vd =5.5 V, ID = 800 mA, Zin = Zout = 50 ) S11 Freq GHz 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 dB -0.85 -1.28 -2.06 -2.91 -3.20 -2.91 -2.73 -2.46 -2.22 -2.28 -2.76 -3.89 -6.19 -8.87 -5.93 -3.97 -3.82 -5.51 Mag 0.91 0.86 0.79 0.72 0.69 0.72 0.73 0.75 0.77 0.77 0.73 0.64 0.49 0.36 0.51 0.63 0.64 0.53 Phase -69.53 S21 dB -16.32 Mag 0.15 1.18 0.06 0.91 6.73 15.22 14.27 10.89 8.36 7.21 7.08 8.02 9.91 11.57 11.03 9.35 8.05 7.29 4.77 1.44 0.18 0.01 0.02 0.01 0.00 0.00 Phase 175.58 49.05 -63.29 159.65 57.13 -63.61 S12 dB -51.70 -46.75 -57.72 -57.72 -57.72 -54.90 Mag Phase S22 dB -0.74 -2.93 -0.59 -1.18 -4.56 -12.67 -6.90 -7.10 -5.99 -5.33 -5.56 -6.70 -9.09 -11.27 -9.02 -7.32 -7.66 -9.92 -6.05 -3.22 -2.57 -2.14 -1.79 -1.49 -1.22 -1.08 Mag 0.92 0.71 0.93 0.87 0.59 0.23 0.45 0.44 0.50 0.54 0.53 0.46 0.35 0.27 0.35 0.43 0.41 0.32 0.50 0.69 0.74 0.78 0.81 0.84 0.87 0.88 Phase -61.37 -110.65 -134.98 -171.79 151.19 -160.02 -173.75 -179.00 175.99 163.53 149.41 135.78 126.82 138.43 143.80 126.32 102.27 88.21 80.79 31.22 -14.04 -48.95 -76.03 -97.03 -113.22 -126.30 2.60E-03 -95.53 4.60E-03 -125.88 1.30E-03 -130.77 1.30E-03 64.56 1.30E-03 110.37 1.80E-03 56.43 1.30E-03 -35.93 1.40E-03 -78.75 1.40E-03 -109.63 1.80E-03 -136.34 2.10E-03 153.71 2.20E-03 151.00 3.10E-03 104.36 4.20E-03 48.68 3.80E-03 -7.09 4.70E-03 -83.32 4.00E-03 -127.39 3.00E-03 150.09 2.50E-03 140.32 4.90E-03 102.64 3.60E-03 59.47 1.80E-03 2.36 1.90E-03 -23.94 1.50E-03 38.32 5.00E-04 46.67 1.00E-03 158.26 -114.70 1.47 -141.33 -25.02 -156.19 -0.83 -162.66 16.56 -170.79 23.65 -178.53 23.09 172.56 162.29 148.18 131.48 107.67 66.21 -17.97 20.74 18.44 17.16 17.00 18.09 19.92 21.27 -160.60 -57.72 128.10 74.59 31.07 -9.66 -52.96 -57.08 -57.08 -54.90 -53.56 -53.15 -104.92 -50.17 -169.21 -47.54 119.60 52.62 -15.59 -95.95 158.78 47.46 -35.35 20.47 1.97 -16.33 -33.78 -41.36 -48.40 -46.56 -47.96 -50.46 -52.04 -46.20 -48.87 -54.90 -54.43 -56.48 -66.02 -60.00 -100.42 20.85 -145.89 19.42 -177.46 18.11 151.43 103.81 -63.36 17.25 13.56 3.19 -12.43 0.24 -8.88 -2.37 -0.99 -0.65 -0.54 -0.46 -0.40 0.36 0.76 0.89 0.93 0.94 0.95 0.95 -118.45 -14.91 -145.51 -37.99 -161.21 -35.39 -171.73 -44.58 -179.38 -46.20 174.06 -56.48 Note: 1. Dataobtainedfromon-wafermeasurements. 4 Biasing and Operation TherecommendedquiescentDCbiasconditionforoptimum efficiency, performance, and reliability isVd=5.5 voltswithVgsetforId=800mA.Minorimprovementsin performancearepossibledependingontheapplication. Thedrainbiasvoltagerangeis3to5.5V.AsingleDCgate supplyconnectedtoVgwillbiasallgainstages.Muting canbeaccomplishedbysettingVgtothepinch-offvoltageVp(-1.0V). An optional output power detector network is also provided.The differential voltage between the Det-Ref andDet-OutpadscanbecorrelatedwiththeRFpower emergingfromtheRFoutputport.Thedetectedvoltage isgivenby: V = ( ref - Vdet )- Vofs V Assembly Techniques ThebacksideoftheMMICchipisRFground.Formicrostrip applicationsthechipshouldbeattacheddirectlytothe groundplane(e.g.circuitcarrierorheatsink)usingelectricallyconductiveepoxy[1] Forbestperformance,thetopsideoftheMMICshouldbe broughtuptothesameheightasthecircuitsurrounding it.This can be accomplished by mounting a gold plate metalshim(samelengthandwidthastheMMIC)under thechipwhichisofcorrectthicknesstomakethechip and adjacent circuit the same height. The amount of epoxyusedforthechipand/orshimattachmentshould bejustenoughtoprovideathinfilletaroundthebottom perimeterofthechiporshim.Thegroundplainshould be free of any residue that may jeopardize electrical or mechanicalattachment. whereVref isthevoltageatthe DET _ R port,Vdet isavoltage ThelocationoftheRFbondpadsisshowninFigure12. atthe DET _ O port,andVofs isthezero-input-poweroffset NotethatalltheRFinputandoutputportsareinaGroundvoltage.Therearethreemethodstocalculate: Signal-Groundconfiguration. 1. Vofs canbemeasuredbeforeeachdetectormeasureRFconnectionsshouldbekeptasshortasreasonableto ment(byremovingorswitchingoffthepowersource minimize performance degradation due to undesirable and measuring ).This method gives an error due to seriesinductance.Asinglebondwireisnormallysufficient temperaturedriftoflessthan0.01dB/50C. forsignalconnections,howeverdoublebondingwith0.7 2. Vofs canbemeasuredatasinglereferencetemperature. mil gold wire or use of gold mesh [2] is recommended Thedrifterrorwillbelessthan0.25dB. forbestperformance,especiallynearthehighendofthe 3. Vofs caneitherbecharacterizedovertemperatureand frequencyband. storedinalookuptable,oritcanbemeasuredattwo Thermosonicwedgebondingispreferredmethodforwire temperaturesandalinearfitusedtocalculateatany attachmenttothebondpads.Goldmeshcanbeattached temperature.Thismethodgivesanerrorclosetothe usinga2milroundtrackingtoolandatoolforceofapmethod#1. proximately22gramsandaultrasonicpowerofroughly TheRFportsareACcoupledattheRFinputtothefirststage andtheRFoutputofthefinalstage.Nogroundwiresare neededsincegroundconnectionsaremadewithplated through-holestothebacksideofthedevice. 55dBforadurationof76+/-8mS.Theguidedwedgeat anuntrasonicpowerlevelof64dBcanbeusedfor0.7mil wire.Therecommendedwirebondstagetemperatureis 150+/-2C. CautionshouldbetakentonotexceedtheAbsoluteMaximumRatingforassemblytemperatureandtime. Thechipis100umthickandshouldbehandledwithcare. ThisMMIChasexposedairbridgesonthetopsurfaceand shouldbehandledbytheedgesorwithacustomcollet (donotpickupthediewithavacuumondiecenter). This MMIC is also static sensitive and ESD precautions shouldbetaken. Notes: [1] Ablebond84-1LM1silverepoxyisrecommended. [2] Buckbee-MearsCorporation,St.Paul,MN,800-262-3824 5 Vg Vd 1 Vd 2 DQ DET _O RF in RF out Vg Vd 1 DQ Vd 2 DET _R Figure 11. AMMC-6420 Schematic RFin RFout Figure 12. AMMC-6420 Bonding pad locations Vd Vg 68 pF 0.5nH Vg Vd 1 Vd 2 DET _ O RFOutput RFInput RFI AMMC-6420 RFO DET _ R Vg Vd 1 Vd 2 0.5nH Vg 68 pF Vd Notes: 1. =>1F capacitors on DC biasing lines not shown required. 2. Vg connections recommended on both sides for devices operating at or above 1 condition. Figure 13. AMMC-6420 Assembly diagram 0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 1 Det_R - Det_O [V] 0.1 5 10 15 20 25 Pout[dBm] 30 35 0.01 Figure 14. AMMC-6420 Typical Detector Voltage and Output Power, Freq=12GHz Det_R - Det_O [V] Ordering Information: AMMC-6420-W10=10devicespertray AMMC-6420-W50=50devicespertray For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Pte. in the United States and other countries. Data subject to change. Copyright (c) 2006 Avago Technologies Pte. All rights reserved. 5989-3938EN - April 12, 2006 |
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